Title :
Electrical and geometrical properties of a Si quantum nanowire device fabricated by an inorganic EB resist process
Author :
Tsutsumi, T. ; Ishii, K. ; Hiroshima, H. ; Kanemaru, S. ; Suzuki, E. ; Tomizawa, K.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
Recently, ultra-small Si devices utilizing a quantum-size and/or Coulomb blockade effect have been received much attention to open a new Si device stream. This paper describes both electrical and geometrical properties of a Si quantum device with a Si nanowire channel fabricated by using an inorganic EB resist process. Especially, the physical structure of the Si quantum nanowire has well been investigated by TEM observation for the first time.
Keywords :
Coulomb blockade; electron resists; elemental semiconductors; nanotechnology; semiconductor quantum wires; silicon; size effect; transmission electron microscopy; Coulomb blockade; Si; Si quantum nanowire device; TEM; electrical properties; fabrication process; geometrical properties; inorganic EB resist; quantum size effect; Amorphous materials; Doping; Electrons; Epitaxial layers; Metallization; Nanoscale devices; Oxidation; Rapid thermal processing; Resists; Textile industry;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984144
