Electrical and geometrical properties of a Si quantum nanowire device fabricated by an inorganic EB resist process

Author

Tsutsumi, T. ; Ishii, K. ; Hiroshima, H. ; Kanemaru, S. ; Suzuki, E. ; Tomizawa, K.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

170

Lastpage

171

Abstract

Recently, ultra-small Si devices utilizing a quantum-size and/or Coulomb blockade effect have been received much attention to open a new Si device stream. This paper describes both electrical and geometrical properties of a Si quantum device with a Si nanowire channel fabricated by using an inorganic EB resist process. Especially, the physical structure of the Si quantum nanowire has well been investigated by TEM observation for the first time.

Keywords

Coulomb blockade; electron resists; elemental semiconductors; nanotechnology; semiconductor quantum wires; silicon; size effect; transmission electron microscopy; Coulomb blockade; Si; Si quantum nanowire device; TEM; electrical properties; fabrication process; geometrical properties; inorganic EB resist; quantum size effect; Amorphous materials; Doping; Electrons; Epitaxial layers; Metallization; Nanoscale devices; Oxidation; Rapid thermal processing; Resists; Textile industry;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984144

Filename

984144