DocumentCode :
2250263
Title :
Influence of process parameters on chemical-mechanical polishing of copper
Author :
Stavreva, Z. ; Zeidler, D. ; Plotner, M. ; Drescher, K.
Author_Institution :
Semicond. & Microsyst. Technol. Lab., Tech. Univ. Dresden, Germany
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
150
Lastpage :
151
Abstract :
Chemical-mechanical polishing (CMP) appears to be the most promising technology for global planarization of device topography and metal patterning in the damascene technique. Cu has been recently studied as a candidate material for future integrated circuit metallization because of its low resistivity and better electromigration resistance than current Al alloy interconnects. In order to achieve a highly reliable CMP process for Cu delineation it is necessary to examine the limitations of the process. Integrating Cu CMP into an interconnect processing sequence requires a detailed understanding of how process parameters affect different aspects of the CMP process and therefore the quality of the patterned lines.
Keywords :
copper; electrical resistivity; electromigration; integrated circuit interconnections; integrated circuit metallisation; polishing; Cu; chemical-mechanical polishing; damascene technique; delineation; device topography; electromigration resistance; global planarization; integrated circuit metallization; interconnect processing sequence; metal patterning; patterned line quality; process parameters; resistivity; Chemical processes; Chemical technology; Conductivity; Electromigration; Inorganic materials; Integrated circuit interconnections; Integrated circuit metallization; Integrated circuit technology; Planarization; Surfaces;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1997.621097
Filename :
621097
Link To Document :
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