DocumentCode :
2250282
Title :
Influence of processing parameters on selectivity in a CVD-process of copper using Cu/sup +1/(hfac)(TMVS)
Author :
Friese, G. ; Abdul-Hak, A. ; Schwierzi, B. ; Höhne, U.
Author_Institution :
Inst. fur Halbleitertechnol., Hannover Univ., Germany
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
152
Lastpage :
154
Abstract :
Copper is a promising metallization material for ULSI, because it has a lower resistivity and a higher EM resistance than aluminum alloys. Shrinking geometries and multilevel metallization cause the problem of filling vias and contact holes with high aspect ratio. CVD processes have the potential for good step coverage even for high aspect ratios. Unless there are very promising results in dry etching of copper no standardized process is available yet. Patterning of copper is done in most cases by chemical mechanical polishing (CMP) in a damascene process, but some difficulties still remain using this process. Selective CVD could be a way to overcome these problems. The paper presents the results of investigating factors which affect the selectivity of a Cu MOCVD process.
Keywords :
ULSI; chemical vapour deposition; copper; electrical resistivity; electromigration; integrated circuit metallisation; Cu; EM resistance; MOCVD process; ULSI; aspect ratio; contact holes; metallization material; multilevel metallization; processing parameters; resistivity; selectivity; step coverage; vias; Aluminum alloys; Chemical processes; Conductivity; Copper; Dry etching; Filling; Geometry; Inorganic materials; Metallization; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1997.621098
Filename :
621098
Link To Document :
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