DocumentCode
2250306
Title
Effects of doping methods on characteristics of InAs quantum dots
Author
Park, Young Min ; Park, Young Ju ; Kim, Kwang Moo ; Shin, JaeCheol ; Kim, Eun Kyu ; Son, MaengHo ; Hwang, Sungwoo ; Yoo, Keon-Ho
Author_Institution
Semicond. Mater. Lab., Korea Inst. of Sci. & Technol., Seoul, South Korea
fYear
2001
fDate
Oct. 31 2001-Nov. 2 2001
Firstpage
180
Lastpage
181
Abstract
We compared the effects of two different doping methods on electronic states of self-assembled InAs quantum dots using photoluminescence and C-V spectroscopy. Analytical interpretation will be presented in conjunction with the experimental data.
Keywords
III-V semiconductors; indium compounds; photoluminescence; self-assembly; semiconductor doping; semiconductor quantum dots; C-V spectroscopy; InAs; InAs self-assembled quantum dot; doping method; electronic states; photoluminescence spectroscopy; Capacitance-voltage characteristics; Doping; Land surface temperature; Photoluminescence; Quantum dots; Spectroscopy; Stationary state; Transmission electron microscopy; US Department of Transportation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location
Shimane, Japan
Print_ISBN
4-89114-017-8
Type
conf
DOI
10.1109/IMNC.2001.984149
Filename
984149
Link To Document