DocumentCode
2250342
Title
The change of electrical properties of the aluminum-porous silicon contact by thermal annealing
Author
Zimin, S.P. ; Komarov, E.P.
Author_Institution
Yaroslavl State Univ., Russia
fYear
1997
fDate
16-19 March 1997
Firstpage
161
Abstract
The purpose of this work was investigating the dependence of electrical parameters of ohmic aluminum contacts to porous silicon (PS) from conducting thermal annealing operation in the range of 300-500/spl deg/C and the analysis of obtained results from the point of physical-chemical phenomena at the Al-PS border by temperature influence.
Keywords
aluminium; annealing; elemental semiconductors; ohmic contacts; porous materials; semiconductor-metal boundaries; silicon; 300 to 500 C; Al-Si; aluminum-porous silicon ohmic contact; electrical properties; thermal annealing; Annealing; Charge carriers; Contacts; Etching; Hydrogen; Impurities; Inorganic materials; Passivation; Plasma temperature; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1997.621101
Filename
621101
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