Title :
Room temperature operated 3.1-μm type-I GaSb-based diode lasers with 80mW continuous wave output power
Author :
Shterengas, L. ; Kipshidze, G. ; Hosoda, T. ; Donetsky, D. ; Belenky, G.
Author_Institution :
State Univ. of New York at Stony Brook, Stony Brook, NY
Abstract :
High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1 mum at room temperature are reported. Devices operate in continuous-wave regime with output power above 200 mW and 80 mW at 250 K and 285 K, correspondingly.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; semiconductor quantum wells; InAlGaAsSb; continuous wave output power; continuous-wave regime; high-power diode lasers; power 80 mW; type-I diode lasers; type-I quantum-well; wavelength 3.1 mum; Carrier confinement; Chemical lasers; Diode lasers; Gas lasers; Optical design; Power generation; Power lasers; Quantum cascade lasers; Semiconductor lasers; Temperature sensors; (140.3070) Infrared and far-infrared lasers; (140.5960) Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
