Title :
Room temperature, Sb-based monolithic EP-VCSEL at 2.3 μm including 2 n-type DBR
Author :
Ducanchez, A. ; Cerutti, L. ; Garnache, A. ; Genty, F.
Author_Institution :
Inst. d´´Electron. du Sud (IES), Univ. Montpellier II, Montpellier
Abstract :
We demonstrate a 2.3 mum emission at RT under quasi-CW operation from a Sb-based monolithic VCSEL. The structure is composed of 2 n-doped AlAsSb/GaSb DBR, a type-I GaInAsSb/AlGaAsSb QWs active region and a tunnel junction.
Keywords :
III-V semiconductors; aluminium compounds; antimony; distributed Bragg reflector lasers; gallium compounds; semiconductor quantum wells; surface emitting lasers; AlAsSb-GaSb; DBR; GaInAsSb-AlGaAsSb; monolithic EP VCSEL; quasi CW operation; room temperature; tunnel junction; wavelength 2.3 mum; Distributed Bragg reflectors; Gas lasers; Laser modes; Optical surface waves; Reflectivity; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; (250.5960) Semiconductor lasers; (250.7260) Vertical cavity surface emitting lasers.;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
