DocumentCode :
2250629
Title :
Resonant in-situ photoluminescence of Si-QDs buried in SiOx/SiNx distributed Bragg reflector
Author :
Wu, Chung-Lun ; Lin, Yung-Hsiang ; Lin, Gong-Ru
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
A 20-pair SiOx/SiNx:Si-QDs distributed Bragg reflector with in-situ Si-QDs contributed photoluminescence at 667 nm is demonstrated to shrink the Si-QDs emission linewidth from 140 to 19 nm and enhance its intensity by 37.4 times.
Keywords :
distributed Bragg reflectors; nanostructured materials; photoluminescence; semiconductor quantum dots; silicon compounds; SiOx-SiNx; distributed Bragg reflector; emission linewidth; resonant in-situ photoluminescence; wavelength 667 nm; Distributed Bragg reflectors; Films; Periodic structures; Photoluminescence; Refractive index; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5951042
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2250629
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