DocumentCode :
2250679
Title :
Black Box Modelling at the Circuit level: Op-Amp as a Case Study
Author :
Taher, H. ; Schreurs, D. ; Nauwelaers, B.
Author_Institution :
ESAT-TELEMIC, K.U.Leuven, Leuven
fYear :
2006
fDate :
16-19 May 2006
Firstpage :
133
Lastpage :
136
Abstract :
In general, models at the device and circuit levels are very important in system design. Building compact models at the circuit level is complicated, needs a lot of physical information about the circuit and moreover it has a long simulation time. We present in this paper an alternative modeling methodology, black box modeling. In this technique, we need only the output behavior of the circuit. We get this behavior either from measurements or simulations from previously built compact models. We apply this technique to the operational amplifier as a case study. We use the opamp design consisting of BSIM3v3-based compact transistor models to obtain the performance of the circuit. An excellent agreement is obtained between the output current from the black box model of the op-amp and the corresponding output from the model used to build it
Keywords :
network synthesis; operational amplifiers; transistor circuits; BSIM3v3-based compact transistor models; black box modelling; circuit level; op-amp; opamp design; operational amplifier; Artificial neural networks; Circuit simulation; Computer aided software engineering; Current measurement; Equations; Nonlinear systems; Operational amplifiers; State-space methods; TV; Time series analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrotechnical Conference, 2006. MELECON 2006. IEEE Mediterranean
Conference_Location :
Malaga
Print_ISBN :
1-4244-0087-2
Type :
conf
DOI :
10.1109/MELCON.2006.1653054
Filename :
1653054
Link To Document :
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