DocumentCode
2250726
Title
Ultrafast GaAs nano-whisker photodetector for THz-frequency applications
Author
Zhang, J. ; Mikulics, M. ; Serafini, J. ; Gong, M. ; Adam, R. ; Grützmacher, D. ; Sobolewski, Roman
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Rochester, Rochester, NY, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We have designed and fabricated novel, free-standing GaAs nano-whisker (NW) detectors and demonstrated their femtosecond photoresponse. The NW device was characterized using a femtosecond, time-resolved (THz bandwidth) electro-optic sampling method. Electrical photoresponse transients as short as 600 fs were recorded and their frequency-domain analysis indicated that the intrinsic NW photodetector response bandwidth was well above 2 THz, enabling THz-frequency applications.
Keywords
III-V semiconductors; electro-optical devices; gallium arsenide; nanostructured materials; photodetectors; transient response; GaAs; femtosecond photoresponse; nanowhisker photodetector; photodetector response bandwidth; photoresponse transients; terahertz frequency applications; time-resolved electro-optic sampling method; Bandwidth; Gallium arsenide; Laser excitation; Optical pulses; Photodetectors; Transmission line measurements; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5951046
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