Title :
Raman study of tungsten disilicide formation in thin films
Author :
Chaix-Pluchery, O. ; Lucazeau, G. ; Meyer, F. ; Aubry-Fortuna, V. ; Madar, R.
Author_Institution :
ENSPG, INPG, Saint Martin d´´Heres, France
Abstract :
Transition metal disilicides are of great interest due to their potential applications in microelectronic devices. Especially, tungsten disilicide is used for interconnection applications because of the high conductivity and of the thermal stability of its tetragonal phase. It will be shown that Raman spectroscopy can provide important informations on the formation of WSi/sub 2/ by solid phase reaction between a deposited thin W film and the underlying Si or Si-Ge substrate.
Keywords :
Raman spectra; chemical interdiffusion; metallic thin films; tungsten compounds; Raman spectroscopy; Si substrate; Si-Ge substrate; W thin film; W-Si; W-SiGe; WSi/sub 2/; silicide formation; solid phase reaction; transition metal disilicide; Microelectronics; Raman scattering; Semiconductor films; Solids; Spectroscopy; Substrates; Thermal conductivity; Thermal stability; Transistors; Tungsten;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621108
