Title :
Holographic grating formation by wet etching in amorphous As/sub 40/Ge/sub 10/Se/sub 15/S/sub 30/ thin film
Author :
Jong-Hwa Park ; Jeong-Il Park ; Hong-Bay Chung
Author_Institution :
Dept. of Electron. Mater. Eng, Kwangwoon Univ., Seoul, South Korea
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
Amorphous As/sub 40/Ge/sub 10/Se/sub 15/S/sub 30/ thin films have been studied with the aim of identifying optimum etching conditions that can be used to produce holographic grating structure for use as diffractive optical elements. In this study, we have fabricated a holographic grating with the method of wet etching using 0.26N NaOH. The diffraction efficiency was obtained by +1st order intensity of the diffracted beam. The formed grating profiles were observed by an atomic force microscope and showed that the expected grating profile could be achieved by controlling the etching time.
Keywords :
amorphous semiconductors; arsenic compounds; etching; germanium compounds; holographic gratings; optical fabrication; selenium compounds; semiconductor thin films; AFM; As/sub 40/Ge/sub 10/Se/sub 15/S/sub 30/; NaOH; amorphous As/sub 40/Ge/sub 10/Se/sub 15/S/sub 30/ thin film; atomic force microscopy; diffraction efficiency; diffractive optical elements; etching time control; grating profile observation; holographic grating formation; optimum etching condition; wet etching; Amorphous materials; Atom optics; Atomic force microscopy; Diffraction gratings; Force control; Holographic optical components; Holography; Optical diffraction; Optical films; Wet etching;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984166