The surface treatment with NH/sub 3/ for GaN grown by a sublimation technique

Author

Hyunjae Lee ; Seogwoo Lee ; Suk-Ki Min ; Jonghun Lyou ; Seong-Ju Park

Author_Institution

Sch. of Electron. & Inf. Eng., Korea Univ., South Korea

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

216

Lastpage

217

Abstract

We have applied surface treatment with ammonia to laterally grown GaN. The technique of sublimation was used for the bulk growth of GaN at a temperature of 1080°C, with a reacting gas consisting of NH/sub 3/ and N/sub 2/, on a substrate of metalorganic chemical vapor deposited GaN film/sapphire. With the surface treatment, the laterally grown GaN appears to have an improved surface and structure: cracks are conspicuously reduced as observed with a UV-microscope and crystal uniformity is increased as shown by X-ray diffraction.

Keywords

III-V semiconductors; ammonia; gallium compounds; semiconductor epitaxial layers; semiconductor technology; sublimation; surface treatment; wide band gap semiconductors; 1080 degC; GaN; GaN bulk growth; GaN-Al/sub 2/O/sub 3/; MOCVD GaN film/sapphire substrate; N/sub 2/; NH/sub 3/; cracks reduction; crystal uniformity; laterally grown GaN; metalorganic chemical vapor deposited GaN film; optoelectronic device material; sublimation technique; surface treatment; Crystallization; Gallium nitride; Inorganic materials; Nitrogen; Organic chemicals; Organic materials; Powders; Substrates; Surface cracks; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984167

Filename

984167