• DocumentCode
    2250808
  • Title

    Estimating the influence of light on the performance of polycrystalline thin-film transistors at the sub-threshold region

  • Author

    Papadopoulos, N.P. ; Hatzopoulos, A.A. ; Papakostas, D.K. ; Dimitriadis, C.A. ; Siskos, S.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Aristotle Univ. of Thessaloniki
  • fYear
    2006
  • fDate
    16-19 May 2006
  • Firstpage
    161
  • Lastpage
    164
  • Abstract
    The impact of the light illumination on the drain current of polycrystalline silicon thin-film transistors is studied in this work. The increase of the output current as a result of raised light intensity is modeled, based on measured experimental data for different Vds , Vgs values and transistor sizes W/L. The proposed model has been verified against the measurements and the simulated output characteristics give a good approximation in the sub-threshold region
  • Keywords
    elemental semiconductors; silicon; thin film transistors; drain current; light illumination; polycrystalline thin-film transistors; raised light intensity; silicon thin-film transistors; sub-threshold region; Current measurement; Educational technology; Lighting; Microelectronics; Physics computing; Silicon; Size measurement; Thickness measurement; Thin film transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrotechnical Conference, 2006. MELECON 2006. IEEE Mediterranean
  • Conference_Location
    Malaga
  • Print_ISBN
    1-4244-0087-2
  • Type

    conf

  • DOI
    10.1109/MELCON.2006.1653061
  • Filename
    1653061
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2250808