Title :
Implantation of N-ion on sapphire substrate for GaN epilayer
Author :
Young Ju Park ; Yong Suk Cho ; Eui Kwan Koh ; Eun Kyu Kim ; Gyeungho Kim ; Dongjin Byun ; Suk-Ki Min
Author_Institution :
Semicond. Mater. Lab., Korea Inst. of Sci. & Technol., Seoul, South Korea
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
The main goal of this work is to minimize stress fields due to the mismatch in lattice constants and thermal expansion coefficients between GaN and sapphire by using the chemical and physical changes of the sapphire (0001) substrate. Effects of N/sup +/-implanted sapphire (0001) substrate on GaN epilayer by metal organic chemical vapor deposition (MOCVD) were investigated. It is our intention to examine the possibility of employing the N/sup +/-implantation treatment of the sapphire (0001) substrate to improve the properties of GaN epilayer grown by MOCVD.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; ion implantation; lattice constants; sapphire; semiconductor epitaxial layers; semiconductor growth; thermal expansion; vapour phase epitaxial growth; wide band gap semiconductors; GaN epilayer growth; GaN-Al/sub 2/O/sub 3/:N; MOCVD; N/sup +/-implantation treatment; lattice constants; metal organic chemical vapor deposition; sapphire substrate; stress fields; thermal expansion coefficients; Buffer layers; Gallium nitride; MOCVD; Nitrogen; Rough surfaces; Semiconductor materials; Substrates; Surface roughness; Temperature; Thermal stresses;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984170
