• DocumentCode
    2250925
  • Title

    An Effective Hierarchical PRAM-SLC-MLC Hybrid Solid State Disk

  • Author

    Lu, Ning ; Choi, In-Sung ; Ko, So-Hyang ; Kim, Shin-Dug

  • Author_Institution
    Dept. of Comput. Sci., Yonsei Univ., Seoul, South Korea
  • fYear
    2012
  • fDate
    May 30 2012-June 1 2012
  • Firstpage
    113
  • Lastpage
    118
  • Abstract
    Currently, SLC-MLC hybrid SSD (solid state disk) products become mature. Phase-change random access memory (PRAM) is one of the new non-volatile memory materials used to enhance the limitation of original SLC-MLC hybrid SSD. Through reorganizing the basic functional modes among SLC, MLC, and PRAM, we proposed a new hybrid SSD architecture named PRAM-SLC-MLC Hybrid SSD (PH-SSD), in which a hierarchical updating method is designed. The PH-SSD employs PRAM as a primary updating area, uses SLC as a secondary updating area, uses MLC for main data storage, and performs data migration via a small capacity DRAM. Based on this proper arrangement, the PH-SSD can improve write performance and lifetime of SSD significantly. Through simulation, the PH-SSD achieves over 240% speedup and prolongs the lifetime by up to 2-3 times compared with the previous architecture.
  • Keywords
    memory architecture; performance evaluation; phase change materials; phase change memories; storage management; PH-SSD; PRAM; SSD lifetime improvement; basic functional modes; data migration; data storage; hierarchical PRAM-SLC-MLC hybrid solid state disk; hierarchical updating method; hybrid SSD architecture; nonvolatile memory materials; phase change random access memory; primary updating area; secondary updating area; small capacity DRAM; write performance improvement; Arrays; Flash memory; Indexes; Materials; Phase change random access memory; NAND flash; flash translation layer; hybrid solid state disk; phase-change random access memory; write buffer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer and Information Science (ICIS), 2012 IEEE/ACIS 11th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4673-1536-4
  • Type

    conf

  • DOI
    10.1109/ICIS.2012.30
  • Filename
    6211086