DocumentCode
2251044
Title
Studies on the possibility of highly sensitive PMMA based chemically amplified resists for EB and X-ray lithography
Author
Nakano, A. ; Okamoto, K. ; Kozawa, T. ; Tagawa, S.
Author_Institution
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
fYear
2001
fDate
Oct. 31 2001-Nov. 2 2001
Firstpage
236
Lastpage
237
Abstract
Protons and negative species generated by ionizing irradiation make PMMA matrices sensitive because of electron and proton transfer. These facts imply the possibility to develop a highly sensitive PMMA based chemically amplified resists for EB and X-ray lithography.
Keywords
X-ray lithography; electron resists; photoresists; polymers; EB lithography; PMMA based resists; PMMA matrices; X-ray lithography; chemically amplified resists; electron transfer; proton transfer; Chemical industry; Chemical lasers; Electrons; Ionizing radiation; Polymers; Protons; Resists; Solids; X-ray lasers; X-ray lithography;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location
Shimane, Japan
Print_ISBN
4-89114-017-8
Type
conf
DOI
10.1109/IMNC.2001.984177
Filename
984177
Link To Document