Title :
Studies on the possibility of highly sensitive PMMA based chemically amplified resists for EB and X-ray lithography
Author :
Nakano, A. ; Okamoto, K. ; Kozawa, T. ; Tagawa, S.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
Protons and negative species generated by ionizing irradiation make PMMA matrices sensitive because of electron and proton transfer. These facts imply the possibility to develop a highly sensitive PMMA based chemically amplified resists for EB and X-ray lithography.
Keywords :
X-ray lithography; electron resists; photoresists; polymers; EB lithography; PMMA based resists; PMMA matrices; X-ray lithography; chemically amplified resists; electron transfer; proton transfer; Chemical industry; Chemical lasers; Electrons; Ionizing radiation; Polymers; Protons; Resists; Solids; X-ray lasers; X-ray lithography;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984177
