Title :
Short-wavelength GaInNAs semiconductor disk lasers
Author :
Calvez, S. ; Hastie, J.E. ; Vetter, S.L. ; Dawson, M.D. ; Korpijarvi, V.-M. ; Puustinen, J. ; Guina, M. ; Okhotnikov, O. ; Pessa, M.
Author_Institution :
Inst. of Photonics, Strathclyde Univ., Glasgow
Abstract :
We report a GaInNAs/GaAs semiconductor disk laser with fundamental emission in the 1150-1200 nm waveband, allowing frequency-doubled operation to the yellow/orange. Output power was 1W at 1197 nm with a slope efficiency of 23%.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical harmonic generation; semiconductor lasers; GaAs; GaInNAs; frequency-doubled operation; power 1 W; semiconductor disk lasers; wavelength 1150 nm to 1200 nm; Frequency; Gallium arsenide; Power lasers; Pump lasers; Quantum well lasers; Semiconductor laser arrays; Semiconductor lasers; Solid lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; (140.3480) Lasers, diode-pumped; (140.5960) Semiconductor lasers; (140.7270) Vertical emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
