Thickness measurements of ultra-thin films using AFM

Author

Tae Hun Kim ; Hyuck In Kwon ; Jong Duk Lee ; Byung-Gook Park

Author_Institution

Dept. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

240

Lastpage

241

Abstract

Proposes a new method that can measure the thickness of thin films regardless of the kinds of samples using AFM (atomic force microscopy). The characteristics of AFM lead to the ability to measure the thickness of thin films regardless of the kinds and conductivity of the samples. To verify the usefulness of this method, the thickness of SiO/sub 2/ grown on Si was determined. We compared the thickness value determined using this method with TEM (transmission electron microscopy) data. We obtained reasonable thickness data between 20 and 40 /spl Aring/ compared with TEM data. In addition, using our method, we studied the influence of chemical oxide generated during H/sub 2/SO/sub 4/ PR strip on determining the thickness of the SiO/sub 2/ films.

Keywords

atomic force microscopy; integrated circuit measurement; nanotechnology; thickness measurement; 20 to 40 angstrom; AFM; PR strip; SiO/sub 2/-Si; chemical oxide; gate oxide; nanometer range; semiconductor process technology; thickness measurements; ultra-thin films; Atomic force microscopy; Atomic measurements; Conductivity; Ellipsometry; Force measurement; Refractive index; Silicon; Thickness measurement; Transistors; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984179

Filename

984179