Single-capacitor-single-contact active pixel sensor

Author

Etienne-Cummings, Ralph

Author_Institution

Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA

Volume

5

fYear

2000

fDate

2000

Firstpage

177

Abstract

An 86(H)×75(V) Active Pixel Sensor (APS) using a single-capacitor-single-contact pixel, in a BiCMOS process, is presented. The cell size is 14λ×14λ, using MOSIS´ SCMOS design rules. A smaller cell size is possible in non-scalable processes. The pixel is composed of an NPN phototransistor with a floating base; the base is capacitively coupled to the column select line. A large fill factor, for a CMOS APS, of 76.5% is obtained. With an integration time of 27.68 μs, pixel sensitivity is 6.2 nA/lux and does not saturate above 8 K lux. The reset scheme provides simultaneous lag and blooming protection at 75 frames/s

Keywords

BiCMOS integrated circuits; CMOS image sensors; readout electronics; 1.2 mum; 27.68 mus; 6450 pixel; 75 pixel; 86 pixel; BiCMOS process; CMOS APS; MOSIS SCMOS design rules; NPN phototransistor; blooming protection; capacitive coupling; cell size; column select line; floating base; integration time; large fill factor; pixel sensitivity; reset scheme; simultaneous lag; single-capacitor-single-contact active pixel sensor; BiCMOS integrated circuits; CMOS image sensors; Capacitive sensors; Charge coupled devices; FETs; MOS capacitors; MOS devices; Phototransistors; Pixel; Protection;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on

Conference_Location

Geneva

Print_ISBN

0-7803-5482-6

Type

conf

DOI

10.1109/ISCAS.2000.857392

Filename

857392