DocumentCode
2251213
Title
Optimization of backside micromachined CMOS inductors for RF applications
Author
Ozgur, Mehmet ; Zaghloul, Mona E. ; Gaitan, Michael
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., George Washington Univ., Washington, DC, USA
Volume
5
fYear
2000
fDate
2000
Firstpage
185
Abstract
The quality factor of backside micromachined CMOS inductors is optimized for high frequency applications. Up to 90% improvement of the peak quality factor is predicted for 10 nH inductors according to the simulations over previously published results in this technology. Extensive tests will be performed for the fabricated inductors with an improved post-processing procedure
Keywords
CMOS integrated circuits; Q-factor; inductors; micromachining; CMOS inductor; RF applications; backside micromachining; high frequency applications; optimization; quality factor; Application software; Biomembranes; CMOS technology; Inductors; Parasitic capacitance; Polyimides; Q factor; Radio frequency; Semiconductor device modeling; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location
Geneva
Print_ISBN
0-7803-5482-6
Type
conf
DOI
10.1109/ISCAS.2000.857394
Filename
857394
Link To Document