DocumentCode :
2251213
Title :
Optimization of backside micromachined CMOS inductors for RF applications
Author :
Ozgur, Mehmet ; Zaghloul, Mona E. ; Gaitan, Michael
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., George Washington Univ., Washington, DC, USA
Volume :
5
fYear :
2000
fDate :
2000
Firstpage :
185
Abstract :
The quality factor of backside micromachined CMOS inductors is optimized for high frequency applications. Up to 90% improvement of the peak quality factor is predicted for 10 nH inductors according to the simulations over previously published results in this technology. Extensive tests will be performed for the fabricated inductors with an improved post-processing procedure
Keywords :
CMOS integrated circuits; Q-factor; inductors; micromachining; CMOS inductor; RF applications; backside micromachining; high frequency applications; optimization; quality factor; Application software; Biomembranes; CMOS technology; Inductors; Parasitic capacitance; Polyimides; Q factor; Radio frequency; Semiconductor device modeling; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location :
Geneva
Print_ISBN :
0-7803-5482-6
Type :
conf
DOI :
10.1109/ISCAS.2000.857394
Filename :
857394
Link To Document :
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