DocumentCode :
2251267
Title :
Some electronic properties of single crystalline NiSi
Author :
Meyer, B. ; Gottlieb, U. ; Laborde, O. ; Yang, J.S. ; Lasjaunias, J.C. ; Sulpice, A. ; Madar, R.
Author_Institution :
Lab. des Mater et du Genie Phys., INPG, Saint Martin d´´Heres, France
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
180
Abstract :
NiSi is a promising material for applications in Si microelectronics. A good understanding of its fundamental physical properties is however necessary. We present here resistivity, Hall effect, low temperature specific heat and magnetic measurements of high quality single crystals.
Keywords :
Hall effect; electrical resistivity; nickel alloys; silicon alloys; specific heat; Hall effect; NiSi; electronic properties; magnetic measurement; resistivity; single crystalline NiSi; specific heat; Conductivity; Crystalline materials; Crystallization; Crystals; Hall effect; Magnetic materials; Magnetic variables measurement; Microelectronics; Nickel; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1997.621110
Filename :
621110
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2251267
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