Title :
Voltage reference using mutual compensation of mobility and threshold voltage temperature effects
Author :
Filanovsky, I.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Alberta Univ., Edmonton, Alta., Canada
Abstract :
Mutual compensation of mobility and threshold voltage temperature variations results in a temperature stable bias point of a n-MOS transistor. This effect is used in the proposed voltage reference circuit. The circuit includes an operational amplifier that provides biasing of a diode-connected MOS transistor to the mentioned above point of temperature compensation. Then the voltage at this point is used as the reference voltage setting the operational amplifier output voltage used for the transistor bias
Keywords :
MOSFET circuits; carrier mobility; compensation; reference circuits; carrier mobility; diode connected MOS transistor; operational amplifier; temperature compensation; threshold voltage; voltage reference circuit; CMOS technology; Circuits; Diodes; Equations; FETs; MOSFETs; Operational amplifiers; Temperature dependence; Temperature distribution; Threshold voltage;
Conference_Titel :
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location :
Geneva
Print_ISBN :
0-7803-5482-6
DOI :
10.1109/ISCAS.2000.857397
