Title :
A fast and simplified technique of proximity effect correction for ULSI patterns in electron-beam projection lithography
Author :
Ogino, K. ; Hoshino, H. ; Machida, Y. ; Osawa, M. ; Takahashi, K. ; Arimoto, H.
Author_Institution :
Fujitsu Ltd., Kawasaki, Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
We have proposed a proximity effect correction algorithm using the pattern shape modification method and the interior area removal method, and have applied this algorithm to ULSI patterns.
Keywords :
ULSI; electron beam lithography; proximity effect (lithography); semiconductor process modelling; EPL proximity effect correction algorithm; ULSI patterns; back scattering; electron-beam projection lithography; forward scattering; interior area removal method; pattern shape modification method; Convergence; Laboratories; Lithography; Nonlinear equations; Page description languages; Parallel processing; Proximity effect; Scattering; Shape; Ultra large scale integration;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984185
