DocumentCode
2251348
Title
Highly efficient, ultra low dark current germanium photodetectors integrated on submicron silicon waveguides
Author
Chen, Long ; Dong, Po ; Lipson, Michal
Author_Institution
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
We demonstrate germanium photodetectors integrated on submicron silicon waveguides by low-temperature bonding and ion-cut. The devices show very low dark current of ~100 nA, fiber-accessed responsivity of 0.44 A/W, and quantum efficiency of >90%.
Keywords
bonding processes; elemental semiconductors; germanium; integrated optics; optical waveguides; photodetectors; silicon; Ge; Si; current 100 nA; germanium photodetectors; integrated photodetectors; low dark current photodetectors; submicron silicon waveguides; CMOS process; Dark current; Germanium; Optical devices; Optical waveguides; Photodetectors; Photonic integrated circuits; Plasma temperature; Silicon; Wafer bonding; (040.5160) Photodetectors; (250.5300) Photonic integrated circuits;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4572100
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