Monolithic integration of Si field emitter arrays with n-MOSFET circuits

Author

Nagao, M. ; Kanemaru, S. ; Tamura, Y. ; Tokunaga, K. ; Matsukawa, T. ; Itoh, J.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

262

Lastpage

263

Abstract

To improve the stability and the uniformity of emission currents, we have proposed and fabricated a current-controllable silicon field emitter incorporating a metal-oxide -semiconductor field-effect transistor structure (a MOSFET-structured silicon field emitter). In this device, a built-in MOSFET can control the supply of electrons to the field emitters to stabilize the emission current. The MOSFET-structured emitter is highly compatible with n-MOSFET LSIs in the fabrication processes. Therefore, it is possible to integrate the MOSFET-structured emitter with a driving circuit. We have integrated the Si MOSFET-FEA with n-MOSFET circuits monolithically based on the n-MOSFET process.

Keywords

MOS logic circuits; MOSFET; elemental semiconductors; silicon; vacuum microelectronics; MOSFET-structured silicon field emitter; Si; Si field emitter arrays; current-controllable silicon field emitter; emission current stabilization; monolithic integration; n-MOSFET circuits; n-MOSFET logic circuits; p-type Si substrates; reactive ion etching; Electrodes; Electron emission; Etching; Fabrication; Field emitter arrays; Logic circuits; MOSFET circuits; Monolithic integrated circuits; Silicon; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984189

Filename

984189