Title :
Analysis of resist LER for the patterns replicated by proximity X-ray lithography
Author :
Kikuchi, Y. ; Taguchi, T. ; Matsunaga, H.
Author_Institution :
Adv. Mater. & Process Technol. Lab., Assoc. of Super-Advanced Electron. Technol., Kanagawa, Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
The critical dimensions (CD) of LSI patterns are becoming 100 nm and narrower, and the requirement for CD control in lithography is becoming less than 10 nm. At such dimensions line edge roughness (LER) of resist patterns cannot be overlooked. This paper discusses the dependence of pattern image on LER, by comparison of observed roughness and measured dissolution rates of experimental resists with calculated images.
Keywords :
X-ray lithography; dissolving; photoresists; surface topography; 100 nm; CD control; LSI patterns; chemically amplified resists; critical dimensions; dissolution rates; pattern size; proximity X-ray lithography; resist pattern line edge roughness; Chemicals; Discrete wavelet transforms; Large scale integration; Pattern analysis; Resists; Rough surfaces; Scanning electron microscopy; Surface roughness; X-ray imaging; X-ray lithography;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984192
