DocumentCode
2251483
Title
Fluoropolymer platforms for 157 nm resist applications
Author
Ito, H. ; Wallraff, G.M. ; Fender, N. ; Brock, P.J. ; Truong, H.D. ; Larson, C.E. ; Allen, B.D.
Author_Institution
IBM Res. Div., Almaden Res. Center, San Jose, CA, USA
fYear
2001
fDate
Oct. 31 2001-Nov. 2 2001
Firstpage
270
Lastpage
271
Abstract
This paper reports progress in the development of 157 nm chemically amplified positive resists, describing the polymer syntheses, polymer characterization (e.g. composition, molecular weight, thermal behavior, dissolution kinetics), and lithographic imaging. Our resists are based on α-trifluoromethylacrylic monomers and hexafluoroisopropanol which has a pKa similar to that of phenol.
Keywords
dissolving; materials preparation; molecular weight; photoresists; polymer blends; polymers; ultraviolet lithography; /spl alpha/-trifluoromethylacrylic monomers; 157 nm; 157 nm resist; chemically amplified positive resists; composition; dissolution kinetics; fluoropolymer platforms; hexafluoroisopropanol; lithographic imaging; molecular weight; polymer characterization; polymer syntheses; thermal behavior; Absorption; Chemicals; Indium tin oxide; Integrated circuit synthesis; Lithography; Optical polymers; Plastics industry; Printing; Resists; Standards development;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location
Shimane, Japan
Print_ISBN
4-89114-017-8
Type
conf
DOI
10.1109/IMNC.2001.984193
Filename
984193
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