Title :
Influence of strong reverse-bias on the leakage behavior of light-emitting diodes
Author :
Wang, Y.N. ; Tseng, C.Y. ; Chen, Y.C. ; Chen, N.C.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Tao-Yuan
Abstract :
Leakage current is an important property in InGaN light-emitting diodes (LEDs). An LED chip is operated using strong reverse-bias to increase its leakage current. The leakage current behavior of the operated LED chip is compared with that of an unoperated LED chip.
Keywords :
III-V semiconductors; indium compounds; leakage currents; light emitting diodes; wide band gap semiconductors; LED chip; leakage current; light emitting diodes; strong reverse-bias; Etching; Gallium nitride; Leakage current; Light emitting diodes; Plasma temperature; Quantum well devices; Semiconductor device measurement; Substrates; Tunneling; Voltage;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391714
