Title :
Comparision between alicyclic resist platforms in advanced 193-nm and 157-nm lithography
Author :
Ushirogouchi, T. ; Shida, N. ; Naito, T. ; Saito, S.
Author_Institution :
R&D Center, Toshiba Corp., Kawasaki, Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
Alicyclic resist platforms have already thought to be imperative in 70-110 nm nodes advanced optical nano-lithography using ArF (193-nm) or F/sub 2/ (157-nm) excimer laser exposure system. In this paper, comparative studies of physical and chemical properties of these alicyclic platforms were reported. We also attempted to clarify the essential difference of their potentials in advanced optical nano-lithography.
Keywords :
nanotechnology; photoresists; polymer films; ultraviolet lithography; 157 nm; 193 nm; 70 to 110 nm; DUV lithogrphy; VUV lithography; alicyclic polymer; excimer laser exposure system; optical nano-lithography; resist material; Chemical industry; Design automation; Etching; Laboratories; Lithography; National electric code; Optical materials; Optical polymers; Research and development; Resists;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984194
