DocumentCode
2251501
Title
Comparision between alicyclic resist platforms in advanced 193-nm and 157-nm lithography
Author
Ushirogouchi, T. ; Shida, N. ; Naito, T. ; Saito, S.
Author_Institution
R&D Center, Toshiba Corp., Kawasaki, Japan
fYear
2001
fDate
Oct. 31 2001-Nov. 2 2001
Firstpage
272
Lastpage
273
Abstract
Alicyclic resist platforms have already thought to be imperative in 70-110 nm nodes advanced optical nano-lithography using ArF (193-nm) or F/sub 2/ (157-nm) excimer laser exposure system. In this paper, comparative studies of physical and chemical properties of these alicyclic platforms were reported. We also attempted to clarify the essential difference of their potentials in advanced optical nano-lithography.
Keywords
nanotechnology; photoresists; polymer films; ultraviolet lithography; 157 nm; 193 nm; 70 to 110 nm; DUV lithogrphy; VUV lithography; alicyclic polymer; excimer laser exposure system; optical nano-lithography; resist material; Chemical industry; Design automation; Etching; Laboratories; Lithography; National electric code; Optical materials; Optical polymers; Research and development; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location
Shimane, Japan
Print_ISBN
4-89114-017-8
Type
conf
DOI
10.1109/IMNC.2001.984194
Filename
984194
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