DocumentCode
2251542
Title
Investigation of Contact Properties in Carbon Nanotube Transistors Using Scanning Photocurrent Microscopy
Author
Park, Jaeku ; Ahn, Y.H. ; Park, Jiwoong
Author_Institution
Div. of Energy Syst. Res., Ajou Univ., Suwon
fYear
2007
fDate
26-31 Aug. 2007
Firstpage
1
Lastpage
2
Abstract
Scanning photocurrent measurements are demonstrated in individual carbon nanotube field- effect transistors. Photocurrent images in conjunction with the electrical conductance measurement elucidate the properties of metal-CNT interfaces, especially the electron band alignment at the contact.
Keywords
band structure; carbon nanotubes; electrical contacts; field effect transistors; interface states; photoconductivity; semiconductor nanotubes; semiconductor-metal boundaries; C; carbon nanotube field-effect transistors; electrical conductance measurement; electronic band structures; metal contacts; metal-CNT interfaces; scanning photocurrent microscopy; Atomic force microscopy; Carbon nanotubes; Contacts; Electric variables measurement; Electrodes; FETs; Laser beams; Optical microscopy; Photoconductivity; Semiconductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location
Seoul
Print_ISBN
978-1-4244-1173-3
Electronic_ISBN
978-1-4244-1174-0
Type
conf
DOI
10.1109/CLEOPR.2007.4391716
Filename
4391716
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