• DocumentCode
    2251542
  • Title

    Investigation of Contact Properties in Carbon Nanotube Transistors Using Scanning Photocurrent Microscopy

  • Author

    Park, Jaeku ; Ahn, Y.H. ; Park, Jiwoong

  • Author_Institution
    Div. of Energy Syst. Res., Ajou Univ., Suwon
  • fYear
    2007
  • fDate
    26-31 Aug. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Scanning photocurrent measurements are demonstrated in individual carbon nanotube field- effect transistors. Photocurrent images in conjunction with the electrical conductance measurement elucidate the properties of metal-CNT interfaces, especially the electron band alignment at the contact.
  • Keywords
    band structure; carbon nanotubes; electrical contacts; field effect transistors; interface states; photoconductivity; semiconductor nanotubes; semiconductor-metal boundaries; C; carbon nanotube field-effect transistors; electrical conductance measurement; electronic band structures; metal contacts; metal-CNT interfaces; scanning photocurrent microscopy; Atomic force microscopy; Carbon nanotubes; Contacts; Electric variables measurement; Electrodes; FETs; Laser beams; Optical microscopy; Photoconductivity; Semiconductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4244-1173-3
  • Electronic_ISBN
    978-1-4244-1174-0
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2007.4391716
  • Filename
    4391716