DocumentCode
2251572
Title
Si single-electron CCD
Author
Fujiwara, A. ; Yamazaki, K. ; Takahashi, Y.
Author_Institution
NTT Basic Res. Labs., Atsugi, Japan
fYear
2001
fDate
Oct. 31 2001-Nov. 2 2001
Firstpage
278
Lastpage
279
Abstract
A charge-coupled device (CCD) that can manipulate single electrons (holes) was fabricated and found to operate successfully. We demonstrated that the fabricated device can transfer a single hole and also detect its position by a novel charge sensing method based on the electron-hole system in a Si quantum wire. This was the first demonstration of manipulating an elementary charge in Si.
Keywords
charge-coupled devices; elemental semiconductors; semiconductor quantum wires; silicon; Si; Si quantum wire; charge sensing method; electron-hole system; single-electron charge-coupled device; Charge carrier processes; Charge coupled devices; Electrodes; Electrons; MOSFETs; Quantum dots; Radiative recombination; Spontaneous emission; Voltage; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location
Shimane, Japan
Print_ISBN
4-89114-017-8
Type
conf
DOI
10.1109/IMNC.2001.984197
Filename
984197
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