• DocumentCode
    2251593
  • Title

    Electro-optical modulator based on the p+-n+-n+ transistor structure integrated on SOI substrate

  • Author

    Chuang, Ricky W. ; Hsu, Mao-Teng ; Chou, Shen-Horng

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.
  • Keywords
    electro-optical modulation; integrated optics; silicon-on-insulator; SOI substrate; electrooptical modulator; pnn transistor structure; silicon-on-insulator; time 56 ns; time 60 ns; Frequency measurement; Integrated optics; Optical device fabrication; Optical films; Optical interferometry; Optical modulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5951080
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2251593