Title :
Electro-optical modulator based on the p+-n+-n+ transistor structure integrated on SOI substrate
Author :
Chuang, Ricky W. ; Hsu, Mao-Teng ; Chou, Shen-Horng
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
We report a p+-n+-n+ transistor-based electro-optical modulator fabricated on silicon-on-insulator (SOI) substrate. With 100% modulation depth achieved, the rise and fall times were respectively measured to be 60 and 56 ns. The 3 dB bandwidth in the excess of 10.5 MHz was determined from the corresponding device.
Keywords :
electro-optical modulation; integrated optics; silicon-on-insulator; SOI substrate; electrooptical modulator; pnn transistor structure; silicon-on-insulator; time 56 ns; time 60 ns; Frequency measurement; Integrated optics; Optical device fabrication; Optical films; Optical interferometry; Optical modulation;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
