• DocumentCode
    2251604
  • Title

    High-power broad-band superluminescent diode using selective area growth at 1.5-μm wavelength

  • Author

    Song, Jung Ho ; Kim, Kisoo ; Leem, Young Ahn ; Kim, Gyungock

  • Author_Institution
    Convergence & Components Lab. (ICCL), Electron. & Telecommun. Res. Inst., Daejeon
  • fYear
    2007
  • fDate
    26-31 Aug. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Superluminescent diode with selectively grown multi-quantum-well layer was demonstrated. This light source consists of angled facet single-mode waveguide with a rear absorption region. High output power(77-mW), wide spectral bandwidth(71-nm FWHM), and a very small spectral modulation (0.7-dB) were achieved with a short absorption region length.
  • Keywords
    light sources; superluminescent diodes; angled facet single-mode waveguide; broad-band superluminescent diode; high-power superluminescent diode; light source; multi-quantum-well layer; power 77 mW; rear absorption region; selective area growth; short absorption region length; wavelength 1.5 μmum; Absorption; Bandwidth; Convergence; Light sources; Optical modulation; Optical sensors; Optical waveguides; Power generation; Superluminescent diodes; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4244-1173-3
  • Electronic_ISBN
    978-1-4244-1174-0
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2007.4391719
  • Filename
    4391719