Control of the positioning of self-assembling Si quantum dots on ultrathin SiO/sub 2//c-Si by using scanning probe

Author

Ikeda, M. ; Takaoka, R. ; Sugioka, S. ; Miyazaki, S. ; Hirose, M.

Author_Institution

Dept. of Electr. Eng., Hiroshima Univ., Japan

fYear

2001

fDate

Oct. 31 2001-Nov. 2 2001

Firstpage

282

Lastpage

283

Abstract

In this paper, we demonstrate two different techniques for the positioning of reactive sites for self-assembling Si dots in LPCVD. In the one way, nanometer-scale modification of the initial SiO/sub 2/ surface before LPCVD is made by using the tip of a scanning tunneling microscope (STM) in low pressure H/sub 2/ ambient. The other method is based on the surface modification of SiO/sub 2/ using an electrically-active atomic force microscope (AFM) probe.

Keywords

CVD coatings; atomic force microscopy; elemental semiconductors; nanotechnology; scanning tunnelling microscopy; self-assembly; semiconductor quantum dots; silicon; silicon compounds; H/sub 2/ ambient; LPCVD; Si self-assembled quantum dot; SiO/sub 2/-Si; atomic force microscope; nanofabrication; reactive site positioning; scanning probe; scanning tunneling microscope; ultrathin SiO/sub 2//c-Si surface; Atomic force microscopy; Electron beams; Hydrogen; Industrial control; Probes; Quantum dots; Surface cleaning; Surface treatment; Tunneling; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2001 International

Conference_Location

Shimane, Japan

Print_ISBN

4-89114-017-8

Type

conf

DOI

10.1109/IMNC.2001.984199

Filename

984199