DocumentCode
2251619
Title
1.3 μm band InGaAs MQWs with InGaP metamorphic graded buffer layer on GaAs substrate
Author
Arai, Masakazu ; Kondo, Yasuhiro
Author_Institution
NTT Photonics Lab., NTT Corp., Atsugi
fYear
2007
fDate
26-31 Aug. 2007
Firstpage
1
Lastpage
2
Abstract
We have realized 1.3 μm-band highly strained InGaAs multiple quantum wells on a metamorphic InGaP graded buffer layer on a GaAs substrate grown by metal-organic vapor- phase epitaxy. We confirmed that the InGaP metamorphic buffer is more effective in improving the crystal quality than InGaAs buffer by performing photoluminescence and transmission electron microscope measurements.
Keywords
III-V semiconductors; MOCVD coatings; buffer layers; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; transmission electron microscopy; InGaAs-InGaP-GaAs; crystal quality; highly strained multiple quantum wells; metal-organic vapor- phase epitaxy; metamorphic graded buffer layer; photoluminescence measurement; transmission electron microscope measurements; Buffer layers; Electrons; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Photonics; Quantum well devices; Substrates; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location
Seoul
Print_ISBN
978-1-4244-1173-3
Electronic_ISBN
978-1-4244-1174-0
Type
conf
DOI
10.1109/CLEOPR.2007.4391720
Filename
4391720
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