Title :
1.3 μm band InGaAs MQWs with InGaP metamorphic graded buffer layer on GaAs substrate
Author :
Arai, Masakazu ; Kondo, Yasuhiro
Author_Institution :
NTT Photonics Lab., NTT Corp., Atsugi
Abstract :
We have realized 1.3 μm-band highly strained InGaAs multiple quantum wells on a metamorphic InGaP graded buffer layer on a GaAs substrate grown by metal-organic vapor- phase epitaxy. We confirmed that the InGaP metamorphic buffer is more effective in improving the crystal quality than InGaAs buffer by performing photoluminescence and transmission electron microscope measurements.
Keywords :
III-V semiconductors; MOCVD coatings; buffer layers; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; transmission electron microscopy; InGaAs-InGaP-GaAs; crystal quality; highly strained multiple quantum wells; metal-organic vapor- phase epitaxy; metamorphic graded buffer layer; photoluminescence measurement; transmission electron microscope measurements; Buffer layers; Electrons; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Photonics; Quantum well devices; Substrates; Temperature sensors;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391720
