DocumentCode
2251663
Title
Structure and resonant characteristics of amorphous carbon pillars grown by FIB-CVD
Author
Fujita, J. ; Ishida, M. ; Ichihashi, T. ; Sakamoto, T. ; Ochiai, Y. ; Kaito, T. ; Matsui, S.
Author_Institution
Fundamental Res. Labs., NEC Corp., Tsukuba, Japan
fYear
2001
fDate
Oct. 31 2001-Nov. 2 2001
Firstpage
284
Lastpage
285
Abstract
Beam induced deposition is a superior technique for nano-fabrication and nano-mechanics that allows many degrees of freedom, so that any shape can be grown at any position with nanometer accuracy. We have already reported the three-dimensional growth of amorphous carbon, having a nanostructure of wineglass, coils, and bellows, using precursor of phenanthrene gas and a focused Ga+ ion beam (FIB) induced chemical vapor deposition (CVD). High-precision Ga-ion beams controlled by highly stabilized ion optics in an FIB system (SM15020, SEIKO Instruments) enabled not only normal growth of carbon nano-pillars on substrate, but also lateral growth. In this paper, we report an evaluation of the Young´s modulus of such amorphous carbon pillars by measuring the resonant frequency of pillars Many improvements are needed in our experimental conditions to clearly define the growth condition. However, the very large Young´s modulus and the flexibility of the nano-structure fabrication in FIB-CVD holds great possibility for future applications of these DLC pillars grown by FIB-CVD.
Keywords
Young´s modulus; amorphous semiconductors; carbon; chemical vapour deposition; elemental semiconductors; focused ion beam technology; micromechanical devices; nanotechnology; C; FIB-CVD; Young´s modulus; amorphous carbon pillars; beam induced deposition; nanofabrication; nanomechanics; resonant characteristics; Amorphous materials; Bellows; Chemical vapor deposition; Coils; Control systems; Ion beams; Optical control; Particle beam optics; Resonance; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location
Shimane, Japan
Print_ISBN
4-89114-017-8
Type
conf
DOI
10.1109/IMNC.2001.984200
Filename
984200
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