Title :
Thermal stability of thin CoSi2 layers on polysilicon implanted with As, BF2 and Si
Author :
La Via, F. ; Aberti, A. ; Raineri, V. ; Ravesi, S. ; Rimini, E.
Author_Institution :
Ist. di Metodologie e Tecnologie per la Microelettronica, CNR, Catania, Italy
Abstract :
In this paper we studied the influence of the dopant and of the polysilicon substrate on the thermal stability of a thin CoSi/sub 2/ layer. To distinguish between the influence of the dopant (As or B) and the effect of the implant in the silicon substrate, also an implantation of silicon was performed on a different sample. A large difference in the silicide thermal stability has been observed and this behavior has been explained with the crystallographic orientation of the underlying silicon substrate and of the silicide layer.
Keywords :
cobalt compounds; ion implantation; metallic thin films; thermal stability; CoSi/sub 2/-Si; CoSi/sub 2/-Si:As; CoSi/sub 2/-Si:BF/sub 2/; crystallographic orientation; dopant implantation; polysilicon substrate; silicide layer; thermal stability; Annealing; Atomic measurements; Cobalt; Electrical resistance measurement; Force measurement; Silicides; Silicon; Substrates; Temperature; Thermal stability;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621112
