Title :
Characterization of Silicon Avalanche Photodetectors Fabricated in Standard CMOS process
Author :
Kang, Hyo-Soon ; Lee, Myung-Jae ; Choi, Woo-Young
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul
Abstract :
We present and characterize silicon avalanche photodetectors (APDs) fabricated with 0.18 mum standard complementary metal-oxide-semiconductor (CMOS) process. When the bias is above the avalanche breakdown voltage, the device exhibits photodetection frequency response peaking due to resonance caused by appearance of inductive components in avalanche region.
Keywords :
CMOS integrated circuits; avalanche breakdown; photodetectors; silicon; Si; avalanche breakdown voltage; inductive components; photodetection frequency response; silicon avalanche photodetectors; size 0.18 mum; standard CMOS process; Avalanche breakdown; Breakdown voltage; CMOS process; Frequency response; Impedance; Optical receivers; Photodetectors; Resonance; Silicon; Virtual reality;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391724
