• DocumentCode
    2251793
  • Title

    Carrier depletion based linear silicon modulator

  • Author

    Lo, Stanley M G ; Li, Chao ; Tsang, Hon Ki

  • Author_Institution
    Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We show that the linearity of a silicon electro-optic modulator can be improved by optimizing the embedded diode structure. Optimized designs of silicon modulators can give 5.9 dB improvement in SFDR over conventional LiNbO3 modulators.
  • Keywords
    Mach-Zehnder interferometers; electro-optical modulation; elemental semiconductors; optical design techniques; p-i-n diodes; silicon; Si; carrier depletion; embedded diode structure; linear silicon modulator; silicon electro-optic modulator; spurious free dynamic range; Fiber optics; Linearity; Optical modulation; Optical variables control; Optical waveguides; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5951091
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2251793