Title :
Near-infrared nano-imaging spectroscopy of semiconductor quantum dots using a phase change mask layer
Author :
Tsumori, Nobuhiro ; Takahashi, Motoki ; Saiki, Toshiharu
Author_Institution :
Grad. Sch. of Sci. & Technol., Keio Univ., Yokohama, Japan
Abstract :
We proposed a near-infrared nano-imaging spectroscopy of semiconductor quantum structures using a phase change mask layer. The performance of this method was demonstrated by numerical simulation and photoluminescence measurement of quantum dots.
Keywords :
III-V semiconductors; finite difference time-domain analysis; indium compounds; infrared spectroscopy; masks; nanophotonics; optical images; photoluminescence; semiconductor quantum dots; InAs-InP; near-infrared nanoimaging spectroscopy; numerical simulation; phase change mask layer; photoluminescence measurement; semiconductor quantum dots; Apertures; Optical films; Optical pulses; Phase change materials; Quantum dots; Spectroscopy; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
