Title :
Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology
Author :
Ling, Shih-Chun ; Wang, Te-Chung ; Ko, Tsung-Shine ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution :
Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
Ultraviolet nonpolar InGaN/GaN light-emitting diodes were grown on trench epitaxial lateral overgrowth (TELOG) a-plane GaN template by metalorganic chemical vapor deposition. Electroluminescence measurements revealed main peak at 373 nm when injection current was 40 mA. Furthermore, cathodoluminescence observed the low-defect density wings emitted 373 nm peak and the TELOG coalescence areas emitted 443 nm due to different incorporation of indium Meanwhile, polarization measurement shown a degree of ultraviolet peak is 28.7%.
Keywords :
III-V semiconductors; MOCVD; cathodoluminescence; electroluminescence; gallium compounds; indium compounds; light emitting diodes; light polarisation; semiconductor growth; InGaN-GaN; InGaN-GaN light-emitting diodes; cathodoluminescence; current 40 mA; electroluminescence; epitaxial lateral overgrowth; metalorganic chemical vapor deposition; nonpolar light-emitting diodes; polarization measurement; ultraviolet light-emitting diodes; wavelength 373 nm; wavelength 443 nm; Area measurement; Chemical technology; Chemical vapor deposition; Current measurement; Density measurement; Electroluminescence; Gallium nitride; Indium; Light emitting diodes; Polarization;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391727
