DocumentCode :
2251867
Title :
Strain Effects on Gain Properties of InGaAlN Blue LD
Author :
Cho, Hyung Uk ; Park, Jae Seok ; Yi, Jong Chang
Author_Institution :
Sch. of EEE, Hongik Univ., Seoul
fYear :
2007
fDate :
26-31 Aug. 2007
Firstpage :
1
Lastpage :
2
Abstract :
The strain effects on the optical gain properties of wurtzite InGaAIN multiple quantum well blue laser diode structures were investigated using the self-consistent method and the multiband Hamiltonian for the strained wurtzite crystal. 2% compressive strain gave up to 60% enhancement to the differential gain as well as 15 nm blue shift in the lasing wavelength.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; semiconductor quantum wells; InGaAlN; blue laser diode; multiband Hamiltonian; optical gain properties; self-consistent method; strain effects; strained wurtzite crystal; wurtzite multiple quantum well; Capacitive sensors; Diode lasers; Gallium nitride; High speed optical techniques; Laser feedback; Optical buffering; Optical feedback; Optical noise; Quantum well devices; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
Type :
conf
DOI :
10.1109/CLEOPR.2007.4391729
Filename :
4391729
Link To Document :
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