Title :
Development of F2 exposure tools
Author :
Owa, S. ; Shiraishi, N. ; Omura, Y. ; Aoki, T. ; Matsumoto, Y. ; Hatasawa, M. ; Mori, T. ; Tanaka, I.
Author_Institution :
IC Equip. Div., Nikon Corp., Tokyo, Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
Summary form only given. ArF lithography (wavelength 193 nm) is expected to start its mass-production stage at this time. It will cover the 100 nm resolution node and will extend to near 80 nm. F2 lithography (wavelength 157 nm) is expected to come next; it is the technology that realizes both high throughput (comparable to ArF) and high resolution below 70 nm at the same time. F2 exposure tools have similar structure to ArF tools; but there are significant differences in optics, materials and mechanical structures.
Keywords :
fluorine; integrated circuit manufacture; laser materials processing; nanotechnology; ultraviolet lithography; 157 nm; 70 nm; DUV lithography; F/sub 2/; F/sub 2/ lasers; F2 exposure tools; birefringence; deep UV lithography; high resolution; high throughput; materials; mechanical structures; optics design; Birefringence; Coatings; Lenses; Lithography; Open wireless architecture; Optical design; Optical materials; Stimulated emission; Surface emitting lasers; Throughput;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984212
