Title :
Evaluation of high transmittance attenuated phase shifting mask for 157 nm lithography
Author :
Yamabe, O. ; Watanabe, K. ; Itani, T.
Author_Institution :
Adv. Technol. Res. Dept, Semicond. Leading Edge Technol. Inc, Yokohama, Japan
fDate :
Oct. 31 2001-Nov. 2 2001
Abstract :
Resolution enhancement techniques (RETs) such as attenuated phase shifting mask (Att-PSM) and alternated phase shifting mask (Alt-PSM) are the hopeful art to realize 70 nm node 157 nm lithography. In particular, Att-PSM has advantage for applying various circuit design to ULSI devices. In this paper, we have evaluated a high transmittance Att-PSM in both aerial image simulation and experiment. As a result, optimum transmittance of Att-PSM was obtained and the resolution improvement was confirmed.
Keywords :
ULSI; integrated circuit technology; phase shifting masks; ultraviolet lithography; 157 nm; 70 nm; DUV lithography; ULSI fabrication; aerial image simulation; attenuated phase shifting mask; deep UV lithography; high transmittance attenuated PSM; optimum transmittance; resolution enhancement techniques; Apertures; Art; Circuit simulation; Circuit synthesis; Image resolution; Lead compounds; Lighting; Lithography; Scanning electron microscopy; Substrates;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2001 International
Conference_Location :
Shimane, Japan
Print_ISBN :
4-89114-017-8
DOI :
10.1109/IMNC.2001.984214
