Title :
Local nucleation and lateral crystallisation of the silicide phases in CoSi2 buffer layer of YBCO/CoSi2/Si structure
Author :
Belousov, I. ; Rudenko, E. ; Linzen, Sven ; Seidel, P.
Author_Institution :
Inst. of Mater. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
The metallic cobalt disilicide (CoSi/sub 2/) with a lattice mismatch to Si of only 1.2% and l.5% to YBCO, a thermal expansion coefficient (9.4/spl middot/10/sup -6/ K/sup -1/ between YBCO and Si, low electrical resistivity and as a material for low-resistance ohmic contact to n- and p-type Si could be a very interesting component of multilayer structure based on YBCO and silicon. Phenomena of the local nucleation, lateral crystal growth and agglomeration of cobalt silicide phases have been investigated with emphasis an a possible cause of the surface roughness and pinholes of the silicide layer.
Keywords :
barium compounds; cobalt compounds; crystallisation; electrical resistivity; elemental semiconductors; nucleation; ohmic contacts; semiconductor device metallisation; silicon; surface topography; thermal expansion; yttrium compounds; YBaCuO-CoSi/sub 2/-Si; agglomeration; buffer layer; electrical resistivity; lateral crystal growth; lateral crystallisation; lattice mismatch; local nucleation; low-resistance ohmic contact; multilayer structure; nucleation; pinholes; silicide phases; surface roughness; thermal expansion coefficient; Cobalt; Crystalline materials; Crystallization; Electric resistance; Inorganic materials; Lattices; Silicides; Thermal expansion; Thermal resistance; Yttrium barium copper oxide;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621114
