Title :
ZnO as fast EUV scintillator for the next generation lithography
Author :
Tanaka, Mitsuru ; Nishikino, M. ; Nagashima, Kazuya ; Kimura, Tomohiro ; Furukawa, Yudai ; Murakami, H. ; Sarukura, N. ; Yamatani, H. ; Yoshikawac, A. ; Fukuda, Toshio
Author_Institution :
Adv. Photon Res. Center, Japan Atomic Energy Agency 8-1, Kyoto
Abstract :
Using Ni-like Ag extreme ultraviolet (EUV) laser operated at 13.9-nm, ZnO is shown to be the excellent scintillator in this wavelength region with sufficiently short response time of less than 3 nsec and prominent peak fluorescence originated form exciton at 380 nm.
Keywords :
II-VI semiconductors; excitons; fluorescence; scintillation; ultraviolet lithography; zinc compounds; EUV scintillator; ZnO; exciton; extreme ultraviolet laser; fluorescence; lithography; response time; wavelength 13.9 nm; wavelength 380 nm; Excitons; Fluorescence; Gas lasers; Laser excitation; Light sources; Lithography; Optical materials; Optical pulses; Ultraviolet sources; Zinc oxide;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391745
