Title :
Residual stress and fracture of thick dielectric films for power MEMS applications
Author :
Zhang, X. ; Chen, K.-S. ; Spearing, S.M.
Author_Institution :
Dept. of Manuf. Eng., Boston Univ., MA, USA
Abstract :
This paper presents residual stress characterization and fracture analysis of thick PECVD oxide films. The motivation for this work is to elucidate the factors contributing to residual stress, deformation and fracture of oxide films so as to refine the microfabrication process for power MEMS manufacturing. The stress-temperature behavior of PECVD oxide films during annealing was studied. Analyses of residual stress relaxation, intrinsic stress generation, and the large deformation response of wafers were carried out. Preliminary experimental observations and estimates of oxide fracture were also provided.
Keywords :
annealing; deformation; dielectric thin films; fracture; internal stresses; micromechanical devices; plasma CVD; power semiconductor devices; PECVD; annealing; deformation; deformation response; dielectric films; intrinsic stress generation; microfabrication process; oxide fracture; power MEMS applications; residual stress; stress-temperature behavior; Annealing; Dielectric films; Hydrogen; Micromechanical devices; Plasma temperature; Power engineering and energy; Pulp manufacturing; Residual stresses; Temperature measurement; Thermal stresses;
Conference_Titel :
Micro Electro Mechanical Systems, 2002. The Fifteenth IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7185-2
DOI :
10.1109/MEMSYS.2002.984230
