A 1 GHz CMOS transimpedance amplifier for chip-to-chip optical interconnects

Author

Haralabidis, N. ; Katsafouros, S. ; Halkias, G.

Author_Institution

Inst. of Microelectron. NCSR Demokritos, Athens, Greece

Volume

5

fYear

2000

fDate

2000

Firstpage

421

Abstract

A CMOS transimpedance amplifier (TIA) has been designed and tested for cost effective chip-to-chip optical interconnects. The amplifier is based on a foundry standard CMOS technology which features 0.8 μm drawn channel length, double-poly capacitors and poly-Si resistors. Measurements showed a transimpedance gain of 48 dBΩ over a -3 dB bandwidth of DC-1 GHz and a power consumption of 80 mW when biased at +5 V and AC coupled to the load. The biasing circuitry consumes an additional 52 mW. The mean input referred noise current density was calculated to be 7.4pA/√Hz, which results in an input optical sensitivity of -25.7 dBm for a BER of 10^-9. The experimental results verify to a great extent the expected transmission rate of up to 1.8 Gbps

Keywords

CMOS analogue integrated circuits; DC amplifiers; circuit optimisation; circuit simulation; current mirrors; integrated circuit noise; optical interconnections; 0.8 micron; 1 GHz; 1.8 Gbit/s; 5 V; 80 mW; CMOS transimpedance amplifier; biasing circuitry; chip-to-chip optical interconnects; double-poly capacitors; drawn channel length; expected transmission rate; foundry standard CMOS technology; input optical sensitivity; mean input referred noise current density; polysilicon resistors; power consumption; CMOS technology; Costs; Foundries; Optical amplifiers; Optical design; Optical interconnections; Optical sensors; Semiconductor optical amplifiers; Stimulated emission; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on

Conference_Location

Geneva

Print_ISBN

0-7803-5482-6

Type

conf

DOI

10.1109/ISCAS.2000.857461

Filename

857461