• DocumentCode
    2252703
  • Title

    Carrier dynamics in catastrophic optical bulk damaged InGaAs-AlGaAs strained QW broad-area lasers

  • Author

    Sin, Yongkun ; LaLumondiere, Stephen ; Lotshaw, William T. ; Ives, Neil ; Moss, Steven C.

  • Author_Institution
    Electron. & Photonics Lab., Aerosp. Corp., El Segundo, CA, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We investigated catastrophic optical bulk damage in high power broad-area InGaAs strained quantum well lasers with windowed n-contacts using time-resolved EL and transient PL techniques.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier lifetime; electroluminescence; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; InGaAs-AlGaAs; carrier dynamics; catastrophic optical bulk damage; strained quantum well broad-area lasers; time-resolved electroluminescence; time-resolved transient photoluminescence; windowed n-contacts; Diode lasers; Optical imaging; Optical pumping; Power lasers; Pump lasers; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5951122
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2252703